Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH8, SOT-28FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Height
0.88mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,232
Katrs (Rulli ir 3000) (bez PVN)
€ 0,281
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,232
Katrs (Rulli ir 3000) (bez PVN)
€ 0,281
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
30 V
Package Type
ECH8, SOT-28FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.3mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
11.8 nC @ 10 V
Height
0.88mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Produkta apraksts