Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W

RS noliktavas nr.: 145-5295Ražotājs: onsemiRažotāja kods: ECH8659-TL-W
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

ECH8, SOT-28FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Height

0.88mm

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,232

Katrs (Rulli ir 3000) (bez PVN)

€ 0,281

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W

€ 0,232

Katrs (Rulli ir 3000) (bez PVN)

€ 0,281

Katrs (Rulli ir 3000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

ECH8, SOT-28FL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Height

0.88mm

Forward Diode Voltage

1.2V

Izcelsmes valsts

China

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more