Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
50 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.28 x 10.28 x 4.82mm
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (bez PVN)
€ 1,27
Katrs (Ieskaitot PVN)
1
€ 1,05
Katrs (bez PVN)
€ 1,27
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 1,05 |
10 - 99 | € 0,91 |
100 - 249 | € 0,68 |
250 - 499 | € 0,66 |
500+ | € 0,57 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
2 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
50 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.28 x 10.28 x 4.82mm
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.