Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Configuration
Dual
Transistor Configuration
Common Source
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 5,70
€ 0,57 Katrs (Paka ir 10) (bez PVN)
€ 6,90
€ 0,69 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 5,70
€ 0,57 Katrs (Paka ir 10) (bez PVN)
€ 6,90
€ 0,69 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 90 | € 0,57 | € 5,70 |
100 - 240 | € 0,491 | € 4,91 |
250 - 490 | € 0,426 | € 4,26 |
500 - 990 | € 0,375 | € 3,75 |
1000+ | € 0,34 | € 3,40 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Configuration
Dual
Transistor Configuration
Common Source
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.