Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Height
0.9mm
Width
1.6mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,286
Katrs (Rulli ir 3000) (bez PVN)
€ 0,346
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,286
Katrs (Rulli ir 3000) (bez PVN)
€ 0,346
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Height
0.9mm
Width
1.6mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.