Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
35 V
Package Type
CPH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
4 nC @ 10 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.9mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel Power MOSFET, 35V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,188
Katrs (Rulli ir 3000) (bez PVN)
€ 0,227
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,188
Katrs (Rulli ir 3000) (bez PVN)
€ 0,227
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
35 V
Package Type
CPH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
4 nC @ 10 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.9mm
Izcelsmes valsts
China
Produkta apraksts