Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
22
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V dc
Maximum Emitter Base Voltage
12 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,80
Katrs (Tubina ir 50) (bez PVN)
€ 2,178
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,80
Katrs (Tubina ir 50) (bez PVN)
€ 2,178
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,80 | € 90,00 |
100+ | € 1,35 | € 67,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
22
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V dc
Maximum Emitter Base Voltage
12 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China