N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G

RS noliktavas nr.: 545-0135Ražotājs: onsemiRažotāja kods: BSS123LT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,249

Katrs (Paka ir 10) (bez PVN)

€ 0,301

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
Izvēlēties iepakojuma veidu

€ 0,249

Katrs (Paka ir 10) (bez PVN)

€ 0,301

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 onsemi BSS123LT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 90€ 0,249€ 2,49
100+€ 0,239€ 2,39

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.9mm

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.94mm

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more