Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-225
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Maximum Operating Temperature
+150 °C
Length
7.8mm
Height
11.1mm
Width
3mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-55 °C
Dimensions
7.8 x 3 x 11.1mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,846
Katrs (Paka ir 25) (bez PVN)
€ 1,024
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,846
Katrs (Paka ir 25) (bez PVN)
€ 1,024
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 0,846 | € 21,15 |
100 - 475 | € 0,597 | € 14,92 |
500 - 975 | € 0,489 | € 12,22 |
1000 - 2475 | € 0,396 | € 9,90 |
2500+ | € 0,344 | € 8,60 |
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Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
4 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-225
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
750
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
2.8 V dc
Maximum Operating Temperature
+150 °C
Length
7.8mm
Height
11.1mm
Width
3mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-55 °C
Dimensions
7.8 x 3 x 11.1mm
Izcelsmes valsts
China