Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
2.5
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,529
Katrs (tiek piegadats Tubina) (bez PVN)
€ 0,64
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
25
€ 0,529
Katrs (tiek piegadats Tubina) (bez PVN)
€ 0,64
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
25
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
2.5
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China