Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
2.2 x 1.35 x 1mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,083
Katrs (Paka ir 100) (bez PVN)
€ 0,10
Katrs (Paka ir 100) (Ieskaitot PVN)
100
€ 0,083
Katrs (Paka ir 100) (bez PVN)
€ 0,10
Katrs (Paka ir 100) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
100 - 900 | € 0,083 | € 8,30 |
1000 - 2900 | € 0,059 | € 5,90 |
3000+ | € 0,046 | € 4,60 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN/PNP
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
420
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
2.2 x 1.35 x 1mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China