Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
1
Dimensions
0.9 x 2 x 1.25mm
Maximum Operating Temperature
+150 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,036
Katrs (Rulli ir 3000) (bez PVN)
€ 0,044
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,036
Katrs (Rulli ir 3000) (bez PVN)
€ 0,044
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
3000 - 3000 | € 0,036 | € 108,00 |
6000+ | € 0,034 | € 102,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-363
Mounting Type
Surface Mount
Maximum Power Dissipation
380 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
1
Dimensions
0.9 x 2 x 1.25mm
Maximum Operating Temperature
+150 °C