Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,311
Katrs (Paka ir 25) (bez PVN)
€ 0,376
Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 0,311
Katrs (Paka ir 25) (bez PVN)
€ 0,376
Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 0,311 | € 7,78 |
100 - 225 | € 0,269 | € 6,72 |
250 - 475 | € 0,233 | € 5,82 |
500 - 975 | € 0,204 | € 5,10 |
1000+ | € 0,187 | € 4,68 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Izcelsmes valsts
China