Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
150 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Collector Emitter Saturation Voltage
-0.65 V
Produkta apraksts
Small Signal PNP Transistors, 40 to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,097
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,117
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
100
€ 0,097
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,117
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
100
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-50 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
150 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Collector Emitter Saturation Voltage
-0.65 V
Produkta apraksts
Small Signal PNP Transistors, 40 to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.