Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,066
Katrs (Iepakojuma ir 1000) (bez PVN)
€ 0,08
Katrs (Iepakojuma ir 1000) (Ieskaitot PVN)
1000
€ 0,066
Katrs (Iepakojuma ir 1000) (bez PVN)
€ 0,08
Katrs (Iepakojuma ir 1000) (Ieskaitot PVN)
1000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Maiss |
---|---|---|
1000 - 2000 | € 0,066 | € 66,00 |
3000+ | € 0,052 | € 52,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
800 mA
Maximum Collector Emitter Voltage
45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.58 x 3.86 x 4.58mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.