Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-800 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal PNP Transistors, 40 to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,057
Katrs (Rulli ir 2000) (bez PVN)
€ 0,069
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 0,057
Katrs (Rulli ir 2000) (bez PVN)
€ 0,069
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
2000 - 2000 | € 0,057 | € 114,00 |
4000+ | € 0,053 | € 106,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-800 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.33 x 5.2 x 4.19mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
Small Signal PNP Transistors, 40 to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.