P-Channel MOSFET, 40 A, 30 V, 3-Pin ATPAK onsemi ATP102-TL-H

RS noliktavas nr.: 163-2040Ražotājs: onsemiRažotāja kods: ATP102-TL-H
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

ATPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

1.5mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,323

Katrs (Rulli ir 3000) (bez PVN)

€ 0,391

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 40 A, 30 V, 3-Pin ATPAK onsemi ATP102-TL-H

€ 0,323

Katrs (Rulli ir 3000) (bez PVN)

€ 0,391

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 40 A, 30 V, 3-Pin ATPAK onsemi ATP102-TL-H
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

ATPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

31 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Height

1.5mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more