N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G

RS noliktavas nr.: 800-9361PRažotājs: onsemiRažotāja kods: 2V7002KT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,077

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,093

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G
Izvēlēties iepakojuma veidu

€ 0,077

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,093

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23 onsemi 2V7002KT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
200 - 800€ 0,077€ 15,40
1000 - 2800€ 0,054€ 10,80
3000 - 8800€ 0,042€ 8,40
9000+€ 0,038€ 7,60

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more