Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-3P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-35 V, +35 V
Width
5.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.5mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
24.5mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,05
Katrs (Tubina ir 30) (bez PVN)
€ 4,90
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 4,05
Katrs (Tubina ir 30) (bez PVN)
€ 4,90
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
1500 V
Package Type
TO-3P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-35 V, +35 V
Width
5.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.5mm
Typical Gate Charge @ Vgs
37.5 nC @ 10 V
Height
24.5mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts