N-Channel MOSFET, 2 A, 1500 V, 3-Pin TO-3P onsemi 2SK3747-1E

RS noliktavas nr.: 163-2022Ražotājs: onsemiRažotāja kods: 2SK3747-1E
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

1500 V

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-35 V, +35 V

Width

5.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.5mm

Typical Gate Charge @ Vgs

37.5 nC @ 10 V

Height

24.5mm

Izcelsmes valsts

Korea, Republic Of

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 4,05

Katrs (Tubina ir 30) (bez PVN)

€ 4,90

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 2 A, 1500 V, 3-Pin TO-3P onsemi 2SK3747-1E

€ 4,05

Katrs (Tubina ir 30) (bez PVN)

€ 4,90

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 2 A, 1500 V, 3-Pin TO-3P onsemi 2SK3747-1E
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

1500 V

Package Type

TO-3P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-35 V, +35 V

Width

5.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.5mm

Typical Gate Charge @ Vgs

37.5 nC @ 10 V

Height

24.5mm

Izcelsmes valsts

Korea, Republic Of

Produkta apraksts

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more