Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,382
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,462
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
€ 0,382
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,462
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
25 - 100 | € 0,382 | € 9,55 |
125 - 225 | € 0,345 | € 8,62 |
250 - 600 | € 0,308 | € 7,70 |
625 - 1225 | € 0,263 | € 6,58 |
1250+ | € 0,201 | € 5,02 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.