Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Package Type
TP-FA
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
390 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.5 x 2.3 x 5.5mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,50
Katrs (Rulli ir 700) (bez PVN)
€ 0,605
Katrs (Rulli ir 700) (Ieskaitot PVN)
700
€ 0,50
Katrs (Rulli ir 700) (bez PVN)
€ 0,605
Katrs (Rulli ir 700) (Ieskaitot PVN)
700
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Package Type
TP-FA
Mounting Type
Through Hole
Maximum Power Dissipation
15 W
Minimum DC Current Gain
140, 200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
390 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.5 x 2.3 x 5.5mm
Maximum Operating Temperature
+150 °C
Izcelsmes valsts
China
Produkta apraksts
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.