Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,06
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,073
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
€ 0,06
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,073
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 100 | € 0,06 | € 6,00 |
200 - 400 | € 0,053 | € 5,30 |
500 - 900 | € 0,049 | € 4,90 |
1000 - 1900 | € 0,039 | € 3,90 |
2000+ | € 0,036 | € 3,60 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
340 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Produkta apraksts