N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002KW
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.92mm
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.2mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,193
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,234
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
100
€ 0,193
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,234
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
100
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Lente |
|---|---|---|
| 100 - 900 | € 0,193 | € 19,30 |
| 1000 - 2900 | € 0,15 | € 15,00 |
| 3000 - 8900 | € 0,12 | € 12,00 |
| 9000+ | € 0,117 | € 11,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.92mm
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.2mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products