N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG

RS noliktavas nr.: 124-9944Ražotājs: onsemiRažotāja kods: 2N7002ET
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Czech Republic

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,029

Katrs (Rulli ir 3000) (bez PVN)

€ 0,035

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG

€ 0,029

Katrs (Rulli ir 3000) (bez PVN)

€ 0,035

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,029€ 87,00
6000 - 12000€ 0,029€ 87,00
15000 - 27000€ 0,027€ 81,00
30000 - 57000€ 0,027€ 81,00
60000+€ 0,026€ 78,00

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Width

1.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Czech Republic

Produkta apraksts

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more