Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Dimensions
10.53 x 4.83 x 15.75mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
10.53mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,15
Katrs (Paka ir 10) (bez PVN)
€ 1,392
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 1,15
Katrs (Paka ir 10) (bez PVN)
€ 1,392
Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
60 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Collector Base Voltage
60 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Dimensions
10.53 x 4.83 x 15.75mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
10.53mm
Izcelsmes valsts
China