Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,358
Katrs (Kaste ir 500) (bez PVN)
€ 0,433
Katrs (Kaste ir 500) (Ieskaitot PVN)
500
€ 0,358
Katrs (Kaste ir 500) (bez PVN)
€ 0,433
Katrs (Kaste ir 500) (Ieskaitot PVN)
500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Kaste |
---|---|---|
500 - 500 | € 0,358 | € 179,00 |
1000+ | € 0,29 | € 145,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.