Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
40 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.2 x 4.19 x 5.33mm
Produkta apraksts
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,051
Katrs (Rulli ir 2000) (bez PVN)
€ 0,062
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
€ 0,051
Katrs (Rulli ir 2000) (bez PVN)
€ 0,062
Katrs (Rulli ir 2000) (Ieskaitot PVN)
2000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
2000 - 4000 | € 0,051 | € 102,00 |
6000+ | € 0,048 | € 96,00 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
200 mA
Maximum Collector Emitter Voltage
40 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
300 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.2 x 4.19 x 5.33mm
Produkta apraksts
Small Signal NPN Transistors, 40V to 50V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.