Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Package Type
ECH
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
2.9 x 2.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,234
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,283
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
10
€ 0,234
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,283
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±6V
Package Type
ECH
Mounting Type
Surface Mount
Channel Type
N
Pin Count
8
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
2.9 x 2.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.