Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.05 to 0.13mA
Maximum Drain Source Voltage
40 V
Maximum Drain Gate Voltage
-40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
0.7pF
Source Gate On-Capacitance
0.3pF
Dimensions
1.07 x 0.67 x 0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Length
1.07mm
Height
0.41mm
Width
0.67mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,031
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,038
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
50
€ 0,031
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,038
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
50
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
0.05 to 0.13mA
Maximum Drain Source Voltage
40 V
Maximum Drain Gate Voltage
-40V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
0.7pF
Source Gate On-Capacitance
0.3pF
Dimensions
1.07 x 0.67 x 0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Length
1.07mm
Height
0.41mm
Width
0.67mm
Produkta apraksts
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.