onsemi TF414T5G N-Channel JFET, 40 V, Idss 0.05 to 0.13mA, 3-Pin SOT-883

RS noliktavas nr.: 920-9928PRažotājs: onsemiRažotāja kods: TF414T5G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.05 to 0.13mA

Maximum Drain Source Voltage

40 V

Maximum Drain Gate Voltage

-40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

0.7pF

Source Gate On-Capacitance

0.3pF

Dimensions

1.07 x 0.67 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.07mm

Height

0.41mm

Width

0.67mm

Produkta apraksts

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,031

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,038

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi TF414T5G N-Channel JFET, 40 V, Idss 0.05 to 0.13mA, 3-Pin SOT-883
Izvēlēties iepakojuma veidu

€ 0,031

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,038

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi TF414T5G N-Channel JFET, 40 V, Idss 0.05 to 0.13mA, 3-Pin SOT-883
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.05 to 0.13mA

Maximum Drain Source Voltage

40 V

Maximum Drain Gate Voltage

-40V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

0.7pF

Source Gate On-Capacitance

0.3pF

Dimensions

1.07 x 0.67 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.07mm

Height

0.41mm

Width

0.67mm

Produkta apraksts

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.