onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883

RS noliktavas nr.: 867-3287PRažotājs: onsemiRažotāja kods: TF412ST5G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

4pF

Dimensions

1.08 x 0.68 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.08mm

Height

0.41mm

Width

0.68mm

Produkta apraksts

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,207

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,25

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
Izvēlēties iepakojuma veidu

€ 0,207

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,25

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi TF412SG N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin SOT-883
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
50 - 200€ 0,207€ 10,35
250 - 950€ 0,099€ 4,95
1000 - 2450€ 0,081€ 4,05
2500+€ 0,08€ 4,00

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-883

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

4pF

Dimensions

1.08 x 0.68 x 0.41mm

Maximum Power Dissipation

100 mW

Maximum Operating Temperature

+150 °C

Length

1.08mm

Height

0.41mm

Width

0.68mm

Produkta apraksts

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.