Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Produkta apraksts
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 13,60
€ 6,80 Katrs (Paka ir 2) (bez PVN)
€ 16,46
€ 8,228 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 13,60
€ 6,80 Katrs (Paka ir 2) (bez PVN)
€ 16,46
€ 8,228 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 6 | € 6,80 | € 13,60 |
8 - 38 | € 6,60 | € 13,20 |
40 - 198 | € 6,50 | € 13,00 |
200 - 398 | € 6,30 | € 12,60 |
400+ | € 6,10 | € 12,20 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
75 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
280 nC @ 10 V
Width
9.2mm
Transistor Material
Si
Height
4.5mm
Produkta apraksts