onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

RS noliktavas nr.: 195-8776Ražotājs: ON SemiconductorRažotāja kods: NXH80T120L2Q0P2TG
Skatīt visu IGBT tranzistori

Tehniskie dokumenti

Specifikācija

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Package Type

Q0PACK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

20

Dimensions

70.1 x 32.7 x 12.33mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 45,40

Each (In a Tray of 24) (bez PVN)

€ 54,934

Each (In a Tray of 24) (Ieskaitot PVN)

onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount

€ 45,40

Each (In a Tray of 24) (bez PVN)

€ 54,934

Each (In a Tray of 24) (Ieskaitot PVN)

onsemi NXH80T120L2Q0P2TG IGBT Module 1200 V, 20-Pin Q0Pack, Surface Mount
Noliktavas stāvoklis patreiz nav pieejams

Tehniskie dokumenti

Specifikācija

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

158 W

Package Type

Q0PACK

Mounting Type

Surface Mount

Channel Type

N

Pin Count

20

Dimensions

70.1 x 32.7 x 12.33mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C