Dual N-Channel MOSFET, 34 A, 40 V, 8-Pin DFN onsemi NVMFD5853NLG

RS noliktavas nr.: 163-0303Ražotājs: ON SemiconductorRažotāja kods: NVMFD5853NLT1G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

24 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

2

Height

1.05mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,187

Katrs (Rulli ir 1500) (bez PVN)

€ 0,226

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 34 A, 40 V, 8-Pin DFN onsemi NVMFD5853NLG

€ 0,187

Katrs (Rulli ir 1500) (bez PVN)

€ 0,226

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 34 A, 40 V, 8-Pin DFN onsemi NVMFD5853NLG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

24 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

5.1mm

Number of Elements per Chip

2

Height

1.05mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more