Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG

RS noliktavas nr.: 163-1146Ražotājs: ON SemiconductorRažotāja kods: NTZD5110NT1G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,076

Katrs (Rulli ir 4000) (bez PVN)

€ 0,092

Katrs (Rulli ir 4000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG

€ 0,076

Katrs (Rulli ir 4000) (bez PVN)

€ 0,092

Katrs (Rulli ir 4000) (Ieskaitot PVN)

Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Width

1.3mm

Minimum Operating Temperature

-55 °C

Height

0.6mm

Izcelsmes valsts

Malaysia

Produkta apraksts

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more