Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
20.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Height
0.75mm
Series
NTTFS4928N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,171
Katrs (Rulli ir 1500) (bez PVN)
€ 0,207
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 0,171
Katrs (Rulli ir 1500) (bez PVN)
€ 0,207
Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
30 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
13.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
20.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Height
0.75mm
Series
NTTFS4928N
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V