N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 onsemi NTP082N65S3F

RS noliktavas nr.: 172-8782Ražotājs: ON SemiconductorRažotāja kods: NTP082N65S3F
brand-logo
View all in MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Width

4.7mm

Forward Diode Voltage

1.3V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,10

Katrs (Tubina ir 800) (bez PVN)

€ 2,541

Katrs (Tubina ir 800) (Ieskaitot PVN)

N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 onsemi NTP082N65S3F

€ 2,10

Katrs (Tubina ir 800) (bez PVN)

€ 2,541

Katrs (Tubina ir 800) (Ieskaitot PVN)

N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 onsemi NTP082N65S3F
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

313 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Width

4.7mm

Forward Diode Voltage

1.3V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more