N-Channel MOSFET, 210 A, 40 V, 5-Pin DFN onsemi NTMFS5H414NLT1G
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,50
Katrs (Paka ir 5) (bez PVN)
€ 0,605
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,50
Katrs (Paka ir 5) (bez PVN)
€ 0,605
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products