N-Channel MOSFET, 25 A, 60 V, 5-Pin DFN onsemi NTMFS5C682NLT1G

RS noliktavas nr.: 171-8457Ražotājs: onsemiRažotāja kods: NTMFS5C682NLT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Series

NTMFS5C682NL

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

31.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,10

Katrs (Paka ir 20) (bez PVN)

€ 2,541

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 25 A, 60 V, 5-Pin DFN onsemi NTMFS5C682NLT1G
Izvēlēties iepakojuma veidu

€ 2,10

Katrs (Paka ir 20) (bez PVN)

€ 2,541

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 25 A, 60 V, 5-Pin DFN onsemi NTMFS5C682NLT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
20 - 80€ 2,10€ 42,00
100+€ 1,60€ 32,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Series

NTMFS5C682NL

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

31.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

5 nC @ 10 V

Forward Diode Voltage

1.2V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more