Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NTMFD5C680NLT1G

RS noliktavas nr.: 178-4315Ražotājs: onsemiRažotāja kods: NTMFD5C680NLT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

19 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

Malaysia

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,849

Katrs (Rulli ir 1500) (bez PVN)

€ 1,027

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NTMFD5C680NLT1G

€ 0,849

Katrs (Rulli ir 1500) (bez PVN)

€ 1,027

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NTMFD5C680NLT1G
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
1500 - 3000€ 0,849€ 1 273,50
4500 - 7500€ 0,823€ 1 234,50
9000+€ 0,785€ 1 177,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

19 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Izcelsmes valsts

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more