Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN onsemi NTMFD5C446NLT1G

RS noliktavas nr.: 178-4312Ražotājs: onsemiRažotāja kods: NTMFD5C446NLT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Width

6.1mm

Number of Elements per Chip

2

Forward Diode Voltage

0.8V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,45

Katrs (Rulli ir 1500) (bez PVN)

€ 1,754

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN onsemi NTMFD5C446NLT1G

€ 1,45

Katrs (Rulli ir 1500) (bez PVN)

€ 1,754

Katrs (Rulli ir 1500) (Ieskaitot PVN)

Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN onsemi NTMFD5C446NLT1G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Width

6.1mm

Number of Elements per Chip

2

Forward Diode Voltage

0.8V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more