N-Channel MOSFET, 7 A, 30 V, 6-Pin TSOP onsemi NTGS4141NG

RS noliktavas nr.: 780-0576Ražotājs: ON SemiconductorRažotāja kods: NTGS4141NT1G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Transistor Material

Si

Width

1.7mm

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,091

Katrs (Paka ir 25) (bez PVN)

€ 0,11

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 7 A, 30 V, 6-Pin TSOP onsemi NTGS4141NG
Izvēlēties iepakojuma veidu

€ 0,091

Katrs (Paka ir 25) (bez PVN)

€ 0,11

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 7 A, 30 V, 6-Pin TSOP onsemi NTGS4141NG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Transistor Material

Si

Width

1.7mm

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more