N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK onsemi NTD5C434NT4G

RS noliktavas nr.: 178-4310Ražotājs: onsemiRažotāja kods: NTD5C434NT4G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

80.6 nC @ 10 V

Forward Diode Voltage

1.2V

Height

2.25mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Vietnam

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 5,30

Katrs (Rulli ir 2500) (bez PVN)

€ 6,413

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK onsemi NTD5C434NT4G

€ 5,30

Katrs (Rulli ir 2500) (bez PVN)

€ 6,413

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK onsemi NTD5C434NT4G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

80.6 nC @ 10 V

Forward Diode Voltage

1.2V

Height

2.25mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Vietnam

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more