N-Channel MOSFET, 2.6 A, 500 V, 3-Pin DPAK onsemi NDD03N50ZT4G

RS noliktavas nr.: 719-2783Ražotājs: ON SemiconductorRažotāja kods: NDD03N50ZT4G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,52

Katrs (Paka ir 5) (bez PVN)

€ 0,629

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin DPAK onsemi NDD03N50ZT4G

€ 0,52

Katrs (Paka ir 5) (bez PVN)

€ 0,629

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin DPAK onsemi NDD03N50ZT4G
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,52€ 2,60
50 - 120€ 0,317€ 1,58
125 - 245€ 0,315€ 1,58
250 - 495€ 0,312€ 1,56
500+€ 0,31€ 1,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

10 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more