onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23

RS noliktavas nr.: 761-3688Ražotājs: onsemiRažotāja kods: MMBFJ201
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.3 to 1.5mA

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,336

Katrs (Paka ir 25) (bez PVN)

€ 0,407

Katrs (Paka ir 25) (Ieskaitot PVN)

onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23
Izvēlēties iepakojuma veidu

€ 0,336

Katrs (Paka ir 25) (bez PVN)

€ 0,407

Katrs (Paka ir 25) (Ieskaitot PVN)

onsemi MMBFJ201 N-Channel JFET, Idss 0.3 to 1.5mA, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 75€ 0,336€ 8,40
100 - 975€ 0,195€ 4,88
1000 - 2975€ 0,133€ 3,32
3000+€ 0,117€ 2,92

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.3 to 1.5mA

Maximum Gate Source Voltage

-40 V

Maximum Drain Gate Voltage

40V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.