Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,349
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,422
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
50
€ 0,349
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,422
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 50 | € 0,349 | € 17,45 |
100 - 950 | € 0,203 | € 10,15 |
1000 - 2950 | € 0,137 | € 6,85 |
3000 - 8950 | € 0,12 | € 6,00 |
9000+ | € 0,117 | € 5,85 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
30 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.9 x 1.3 x 1.04mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.04mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.