onsemi MMBF5485 N-Channel JFET, Idss 4 → 10mA, 3-Pin SOT-23

RS noliktavas nr.: 772-8929Ražotājs: ON SemiconductorRažotāja kods: MMBF5485
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Idss Drain-Source Cut-off Current

4 → 10mA

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Produkta apraksts

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,137

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,166

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi MMBF5485 N-Channel JFET, Idss 4 → 10mA, 3-Pin SOT-23
Izvēlēties iepakojuma veidu

€ 0,137

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,166

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

onsemi MMBF5485 N-Channel JFET, Idss 4 → 10mA, 3-Pin SOT-23
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Lente
100 - 400€ 0,137€ 13,70
500 - 2400€ 0,129€ 12,90
2500 - 5900€ 0,107€ 10,70
6000 - 11900€ 0,092€ 9,20
12000+€ 0,076€ 7,60

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Idss Drain-Source Cut-off Current

4 → 10mA

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.92 x 1.3 x 0.93mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.92mm

Height

0.93mm

Width

1.3mm

Produkta apraksts

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.