Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
4 → 10mA
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,137
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,166
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
100
€ 0,137
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,166
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Lente |
---|---|---|
100 - 400 | € 0,137 | € 13,70 |
500 - 2400 | € 0,129 | € 12,90 |
2500 - 5900 | € 0,107 | € 10,70 |
6000 - 11900 | € 0,092 | € 9,20 |
12000+ | € 0,076 | € 7,60 |
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Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
4 → 10mA
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.