Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
4 to 16mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
3pF
Source Gate On-Capacitance
7pF
Dimensions
2.92 x 1.3 x 0.93mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Izcelsmes valsts
Philippines
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,076
Katrs (Rulli ir 3000) (bez PVN)
€ 0,092
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,076
Katrs (Rulli ir 3000) (bez PVN)
€ 0,092
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
4 to 16mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
3pF
Source Gate On-Capacitance
7pF
Dimensions
2.92 x 1.3 x 0.93mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Izcelsmes valsts
Philippines
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.