Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
5 → 30mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,286
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,346
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
€ 0,286
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,346
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
25 - 225 | € 0,286 | € 7,15 |
250 - 725 | € 0,137 | € 3,42 |
750 - 1475 | € 0,129 | € 3,22 |
1500 - 2975 | € 0,109 | € 2,72 |
3000+ | € 0,081 | € 2,02 |
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Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
5 → 30mA
Maximum Drain Source Voltage
0.4 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.