Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Izcelsmes valsts
Korea, Republic Of
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,50
Katrs (Tubina ir 50) (bez PVN)
€ 1,815
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,50
Katrs (Tubina ir 50) (bez PVN)
€ 1,815
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,50 | € 75,00 |
100 - 200 | € 1,25 | € 62,50 |
250 - 450 | € 1,20 | € 60,00 |
500+ | € 1,05 | € 52,50 |
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Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Izcelsmes valsts
Korea, Republic Of