Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
500mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
3 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,713
Katrs (tiek piegadats Kaste) (bez PVN)
€ 0,863
Katrs (tiek piegadats Kaste) (Ieskaitot PVN)
10
€ 0,713
Katrs (tiek piegadats Kaste) (bez PVN)
€ 0,863
Katrs (tiek piegadats Kaste) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Kaste |
---|---|---|
10 - 90 | € 0,713 | € 7,13 |
100 - 240 | € 0,452 | € 4,52 |
250 - 990 | € 0,43 | € 4,30 |
1000+ | € 0,367 | € 3,67 |
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
500mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
3 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
160pF
Source Gate On-Capacitance
160pF
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Length
5.2mm
Height
5.33mm
Width
4.19mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.