ON Semiconductor, FJPF2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.209V, 3-Pin TO-220F

RS noliktavas nr.: 864-8969PRažotājs: ON SemiconductorRažotāja kods: FJPF2145TU
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220F

Mounting Type

Through Hole

Maximum Power Dissipation

40 W

Minimum DC Current Gain

20

Pin Count

3

Maximum Operating Temperature

+125 °C

Dimensions

10.36 x 4.9 x 16.07mm

Produkta apraksts

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,797

Katrs (tiek piegadats Tubina) (bez PVN)

€ 0,964

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

ON Semiconductor, FJPF2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.209V, 3-Pin TO-220F
Izvēlēties iepakojuma veidu

€ 0,797

Katrs (tiek piegadats Tubina) (bez PVN)

€ 0,964

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

ON Semiconductor, FJPF2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.209V, 3-Pin TO-220F
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
10 - 40€ 0,797€ 7,97
50 - 90€ 0,706€ 7,06
100 - 490€ 0,612€ 6,12
500 - 990€ 0,542€ 5,42
1000+€ 0,428€ 4,28

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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220F

Mounting Type

Through Hole

Maximum Power Dissipation

40 W

Minimum DC Current Gain

20

Pin Count

3

Maximum Operating Temperature

+125 °C

Dimensions

10.36 x 4.9 x 16.07mm

Produkta apraksts

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.